Popa, Mihail2015-12-032015-12-032015Popa, Mihail. Cercetarea proprietăţilor electrice ale straturilor electrice ale straturilor subţiri de ZnSxSe1-x / Mihail Popa // „Ştiinţa în nordul Republicii Moldova: realizări, probleme, perspective”, Сonferinţa naţională cu participare internaţională, 25-26 sept. 2015. - Bălţi. - 2015. - P. 24-28.http://hdl.handle.net/123456789/1315ZnSxSe1-x thin films (x = 0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) were prepared from thermal evaporation method in quasi closed volume with a thickness between 0.2 and 1.0 m. Thermal activation energy determined from the dependencies lnσ = f (103/T) type were between 0.43 eV - 1.89 eV (for T > 300 K) and 0,132-0,403 eV ( for T < 300K). Explaining the mechanism of electron transport in polycrystalline ZnSxSe1-x thin films is based on the Efros-Shklovskii and Mott models. We have studied the current-voltage characteristics of In - ZnSxSe1-x - In type systems and the obtained results were represented in the Schottky coordinates which have been shown to be linear. By extrapolating the linear portion of curve lnJ = f(U1/2) forU 0, was determined the height of the barrier potential at the metal-semiconductor interface. The values found for the 0 accord well with those found for the ZnSe and ZnS crystals. XRD, SEM AFM straturi subţiriroAttribution-NonCommercial-NoDerivatives 4.0 Internaționalstraturi subţiristraturi electriceproprietăţi electriceArticle