Cercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite [Articol]

dc.contributor.authorPopa, Mihailro
dc.date.accessioned2019-08-21T06:05:05Z
dc.date.available2019-08-21T06:05:05Z
dc.date.issued2019
dc.description.abstractIn the work were presented preparation and research techniques of the electrical properties of the perovskite solar cells, in which ZnS, ZnSe and ZnTe thin films were applied. Using these layers as the electron transport layer (ETL), a power conversion efficiency (PCE) of about 2.57% was obtained, and cells with hole transport layer (HTL) the PCE achieved a maximum 2.14%. By doping ETL and HTL with chalcogenides a maximum yield of 3.98% was obtained. Preparation of solar cells with two layers of ETL or HTL increased of PCE to 7.40% maximum. By doping bulk heterojunction of perovskite with the calcogenide thin layers has increased PCE of cells up to 13.84%.en
dc.identifier.citationPopa, Mihail. Cercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite / M. Popa // Tradiţie şi inovare în cercetarea ştiinţifică, Ediţia a 8-a: Materialele Colloquia Professorum din 12 oct. 2018. – Bălţi : US „Alecu Russo”, 2019. – P. 137-143. – ISBN 978-9975-50-235.ro
dc.language.isororo
dc.publisherUSARBro
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectperovskiteen
dc.subjectETLen
dc.subjectHTLen
dc.subjectITOen
dc.subjectPEDOT-PSSen
dc.subjectPCBMen
dc.subjectPCEen
dc.titleCercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite [Articol]ro
dc.typeArticleen

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